A Mathematical Study of Irregularity Indices for the Silicon Carbide Lattice Si p, q

Graph theory has become an important tool in chemistry for analyzing and representing molecular structures. In molecular graphs, atoms and chemical bonds are represented by vertices and edges, respectively, enabling a mathematical characterization of chemical compounds. In this study, we focus on the two-dimensional (2D) structure of the silicon carbide network ( Si 2 C 3 ). Irregularity indices, first introduced by Paul Erd˝ os, constitute a significant class of topological indices used to quantify the structural irregularity of molecular graphs. These indices play a vital role in understanding the physicochemical properties of chemical networks. We compute sixteen irregularity-based topological indices of the silicon carbide network, including the First Zagreb Index, Second Zagreb Index, Randi´ c Index, Degree Variance, Albertson Irregularity Index, and several other related measures.

@article{kashaf2026,
  author  = {Kashaf, Moazzma and Mubeen, Haseeba and Shaf, Moiza},
  title   = {A Mathematical Study of Irregularity Indices for the Silicon Carbide Lattice Si p, q},
  journal = {Journal of Emerging Research in Science and Technology},
  year    = {2026},
  volume  = {},
  number  = {},
  doi     = {},
}